Self-aligning silicon oxynitride stack for improved isolation structure
US6265283A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Aug 12, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Aug 12, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76224
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Methods of fabricating an isolation structure on a substrate are provided. In one aspect, a method of fabricating an isolation structure on a substrate is provided that includes forming a first insulating layer on the substrate wherein the first insulating layer has a first sidewall. A trench is formed in the substrate that has a second sidewall. A second insulating layer is formed in the trench. The second insulating layer displaces the second sidewall laterally. The first insulating layer is densified by heating to liberate gas therefrom and thereby move the first sidewall into substantial vertical alignment with the second sidewall. The risk of substrate attack due to trench isolation structure pullback is reduced. Trench edges are covered by thick isolation material.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.