Homi E. Nariman
14Patents
6h-index
8Co-inventors
51Inventor score
Filing activity: Oct 1, 1998 → Oct 31, 2002
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6157081A | High-reliability damascene interconnect formation for semiconductor fabrication | Electricity | 53 | Expired |
| US6742168B1 | Method and structure for calibrating scatterometry-based metrology tool used to measure dimensions of features on a semiconductor device | Physics | 15 | Expired |
| US6767835B1 | Method of making a shaped gate electrode structure, and device comprising same | Electricity | 12 | Expired |
| US6660543B1 | Method of measuring implant profiles using scatterometric techniques wherein dispersion coefficients are varied based upon depth | Electricity | 11 | Expired |
| US6146952A | Semiconductor device having self-aligned asymmetric source/drain regions and method of fabrication thereof | Electricity | 10 | Expired |
| US6265283A | Self-aligning silicon oxynitride stack for improved isolation structure | Electricity | 8 | Expired |
| US6096643A | Method of fabricating a semiconductor device having polysilicon line with extended silicide layer | Electricity | 6 | Expired |
| US6372668B1 | Method of forming silicon oxynitride films | Electricity | 5 | Expired |
| US6972853B1 | Methods of calibrating and controlling stepper exposure processes and tools, and system for accomplishing same | Electricity | 5 | Expired |
| US6933158B1 | Method of monitoring anneal processes using scatterometry, and system for performing same | Electricity | 4 | Expired |
| US6927080B1 | Structures for analyzing electromigration, and methods of using same | Physics | 3 | Expired |
| US6791697B1 | Scatterometry structure with embedded ring oscillator, and methods of using same | Electricity | 3 | Expired |
| US6881594B1 | Method of using scatterometry for analysis of electromigration, and structures for performing same | Physics | 1 | Expired |
| US6249032A | Semiconductor device having patterned metal layer over a polysilicon line and method of fabrication thereof | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.