PECVD of TaN films from tantalum halide precursors
US6265311A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Jul 24, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32051
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A plasma enhanced chemical vapor deposition (PECVD) method for depositing high quality conformal tantalum nitride (TaN.sub.x) films from inorganic tantalum pentahalide (TaX.sub.5) precursors and nitrogen is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF.sub.5), tantalum pentachloride (TaCl.sub.5) and tantalum pentabromide (TaBr.sub.5). A TaX.sub.5 vapor is delivered into a heated chamber. The vapor is combined with a process gas containing nitrogen to deposit a TaN.sub.x film on a substrate that is heated to 300.degree. C.-500.degree. C. The deposited TaN.sub.x film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.