Reactive ion etch loading measurement technique
US6268226A · kind A · utility
23Cited by
12References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/12
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for estimating a critical dimension of a trench formed by etching a substrate. First, a regression model is constructed for estimating the critical dimension, in which principal component loadings and principal component scores are also calculated. Next, a substrate is etched and spectral data of the etching are collected. A new principal component score is then calculated using the spectral data and the principal component loadings. Finally, the critical dimension of the trench is estimated by applying the new principal component score to the regression model.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.