Integrated circuit devices and methods employing amorphous silicon carbide resistor materials
US6268229A · kind A · utility
7Cited by
16References
47Claims
0Family size
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Key dates
| Filing date | Dec 14, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Dec 14, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/931
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
Integrated circuits, including field emission devices, have a resistor element of amorphous Si.sub.x C.sub.1-x wherein 0<x<1, and wherein the Si.sub.x C.sub.1-x incorporates at least one impurity selected from the group consisting of hydrogen, halogens, nitrogen, oxygen, sulphur, selenium, transition metals, boron, aluminum, phosphorus, gallium, arsenic, lithium, beryllium, sodium and magnesium.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.