Plasma treated thermal CVD of TaN films from tantalum halide precursors
US6268288A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 27, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Apr 27, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76862
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A plasma treated chemical vapor deposition (PTTCVD) method for depositing high quality conformal tantalum nitride (TaN.sub.x) films from inorganic tantalum halide (TaX.sub.5) precursors and a nitrogen containing gas is described. The inorganic tantalum halide precursors are tantalum pentafluoride (TaF.sub.5), tantalum pentachloride (TaCl.sub.5) and tantalum pentabromide (TaBr.sub.5). In a thermal CVD process, a TaX.sub.5 vapor is delivered into a heated chamber. The vapor is combined with a process gas containing nitrogen to deposit a TaN.sub.x film on a substrate that is heated to 300.degree. C.-500.degree. C. A hydrogen gas is introduced in a radiofrequency generated plasma to plasma treat the TaN.sub.x film. The plasma treatment is performed periodically until a desired TaN.sub.x film thickness is achieved. The PTTCVD films have improved microstructure and reduced resistivity with no change in step coverage. The deposited TaN.sub.x film is useful for integrated circuits containing copper films, especially in small high aspect ratio features. The high conformality of these films is superior to films deposited by PVD.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.