Variable stoichiometry silicon nitride barrier films for tunable etch selectivity and enhanced hyrogen permeability
US6268299A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 25, 2000 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Sep 25, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02271
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low-temperature process for forming a highly conformal barrier film during integrated circuit manufacture by low pressure chemical vapor deposition (LPCVD). The process includes the following steps. First, the process provides ammonia and a silicon-containing gas selected from the group consisting of silane, dichlorosilane, bistertiarybutylaminosilanc, hexachlorodisilane, and mixtures of those compositions. The ratio of the volume of ammonia to the volume of the silicon-containing gas is adjusted to yield silicon concentrations greater than 43 atomic percent in the resultant film. The process applies a deposition temperature of 550.degree. C. to 720.degree. C. The ammonia and the silicon-containing gas are reacted at the deposition temperature to form a silicon-rich nitride film less than 200 .ANG. thick. Finally, the silicon nitride film is deposited by low pressure chemical vapor deposition.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.