Apparatus and method for reducing heating of a workpiece in ion implantation
US6268609A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Apr 19, 1999 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Apr 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J37/3171
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An apparatus and method for reducing heating of a workpiece during ion implantation. The method comprises generating an ion beam for implantation of ions into a workpiece is, the workpiece having a surface defining a plane; scanning the ion beam relative to the surface of the workpiece in a first direction in the plane; repeatedly reciprocating the workpiece in a second direction transverse to the first direction to traverse to and from through the scanned ion beam; and rotating the workpiece 180 degrees about a central axis of the workpiece between each successive traverse of the wafer through the scanned ion beam, so that the wafer always presents the same leading edge to the beam on each traverse.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.