Memory system having a program and erase voltage modifier
US6269025A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Feb 9, 2000 |
| Grant date | Jul 31, 2001 |
| Priority date | — |
| Expiry date | Feb 9, 2020 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C16/16
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A memory system has the capability to adjust a program or erase voltage if the time to program or erase is excessive. The memory system comprises at least a memory cell, a voltage value storage device, a voltage source, and a voltage adjustment circuit. The voltage value storage device stores a voltage value. The voltage source receives and converts the voltage value into a voltage. The voltage source applies the voltage to at least one memory cell. The voltage adjustment circuit is also coupled to receive the stored voltage value. The voltage adjustment circuit determines the time required to program or erase at least one memory cell using the voltage value. If the time to program or erase at least one memory cell is excessive, the voltage adjustment circuit increments the voltage value stored in the voltage value storage device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.