Method of forming pattern
US6270948A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jun 7, 1999 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | Jun 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02282
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a pattern which comprises the steps of, forming an organosilicon film on a work film, the organosilicon film comprising an organosilicon compound having a silicon-silicon bond in a backbone chain thereof and a glass transition temperature of 0.degree. C. or more, forming a resist pattern on the organosilicon film, and transcribing the resist pattern on the organosilicon film through an etching of the organosilicon film by making use of an etching gas containing at least one kind of atom selected from the group consisting of chlorine, bromine and iodine. The organosilicon pattern obtained by the etching is employed as a mask for patterning the work film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.