Ion implantation with charge neutralization
US6271529A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 1998 |
| Grant date | Aug 7, 2001 |
| Priority date | — |
| Expiry date | May 22, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/0045
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An ion implanter is provided for implanting ions in a workpiece. The ion implanter includes an apparatus for generating an ion beam and directing it toward a surface of a work piece and a plasma generator for generating plasma to neutralize the ion beam and the work piece surface. The plasma generator has a plasma generator chamber defined by walls, a relatively narrow outlet aperture for plasma produced in the chamber to leave the chamber to neutralize the beam and work piece surface, cathodes, and anodes spaced from the cathodes and from the walls of the chamber. The plasma generator also has magnets arranged within the plasma generator chamber, adjacent the chamber walls to generate a magnetic field to deflect primary electrons emitted from the cathode from directly reaching the anode. The plasma generator also features a conductive shield, positioned within the chamber between the anode and the magnets, the shield having an electric potential selected to deflect electrons, the magnetic field and the conductive shield effective during operation to cause electrons from the cathode to trace extended paths to ionize gas within the chamber to generate plasma before reaching the anod…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.