Semiconductor component which can be controlled by a field effect

US6271562A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Gerald Deboy · Klagenfurt, AT
• Jens-Peer Stengl · Hersbruck, DE
• Jenoe Tihanyi · Tauberbischofsheim, DE
• Heimo Graf · Trebesing, AT

Key dates

• Filing date: Mar 1, 1999
• Grant date: Aug 7, 2001
• Expiry date: Mar 1, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/157

Abstract

A power semiconductor component that can be controlled by a field effect has a multiplicity of parallel-connected individual components disposed in cells, the cells are disposed tightly packed on a relatively small space in a cell array. Parallel-connected source zones of the cells have shadowed regions that in each case reduce an effective W/L channel ratio in the cells containing the shadowed regions. The invention has the advantage that because of the provision of the shadowed regions inside the source zones that are preferably undoped or at least doped much weaker than the source zones, the critical regions in the cell array with the highest current density are specifically moderated. Thus the current density in the current-carrying filament of the cell is more homogeneously distributed. This measure renders it possible to reduce the cell grid spacing of the cells in the cell array, or to reduce the forward resistance per unit area, and this leads simultaneously to a reduction in the power loss.