Transistor having a nitrogen incorporated epitaxially grown gate dielectric and method of making same
US6274442A · kind A · utility
35Cited by
31References
5Claims
0Family size
Assignee
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Key dates
| Filing date | Jul 15, 1998 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Jul 15, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/693
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An integrated circuit fabrication process is provided for incorporating barrier atoms, preferably nitrogen atoms, within a barrier layer. The barrier layer is interposed between the gate dielectric and the semiconductor substrate. The barrier layer serves to inhibit the passage of dopants from the gate conductor into the channel area. The barrier layer is preferably a nitrogen doped silicon epitaxial layer. The barrier layer may be composed of two layers, a silicon epitaxial layer and a nitrogen doped epitaxial layer formed upon the silicon epitaxial layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.