Method for forming mosfet
US6274444A · kind A · utility
138Cited by
2References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Aug 10, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | Aug 10, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/038
Abstract
A method for forming a MOSFET is described. The feature of this invention is that an epitaxial silicon layer with device isolation structures is formed over a substrate, wherein each device isolation structure is made of oxide. The invention need not etch the substrate for forming a device isolation structure. As a result, the invention not only prevents stress and dislocation generation and avoids leakage current, but also provides an easily method for forming a device isolation structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.