Method for accurate channel-length extraction in MOSFETs
US6275972A · kind A · utility
8Cited by
6References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 12, 1999 |
| Grant date | Aug 14, 2001 |
| Priority date | — |
| Expiry date | May 12, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01R31/2621
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
A method for extracting a channel length between a source and a drain in a substrate of a transistor is disclosed herein. The method includes forward biasing the source with respect to the substrate to inject a charge into the substrate, collecting the charge at the drain, and calculating the channel length from the charge collected at the drain.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.