Inventor · Tangxia, CN

Wei Long

49Patents
11h-index
46Co-inventors
75Inventor score

Filing activity: Sep 30, 1998 → Sep 11, 2023

Most-cited inventions

PatentTitleAreaCited byStatus
US6225669A Non-uniform gate/dielectric field effect transistor Electricity 72 Expired
US6437404B1 Semiconductor-on-insulator transistor with recessed source and drain Electricity 34 Expired
US6608352B1 Determination of thermal resistance for field effect transistor formed in SOI technology Emerging Cross-Sectional Technologies 26 Expired
US6168999A Method for fabricating high-performance submicron mosfet with lateral asymmetric channel and a lightly doped drain Electricity 23 Expired
US6744101B2 Non-uniform gate/dielectric field effect transistor Electricity 22 Expired
US6391767B1 Dual silicide process to reduce gate resistance Electricity 18 Expired
US6417556B1 High K dielectric de-coupling capacitor embedded in backend interconnect Electricity 16 Expired
US6153534A Method for fabricating a dual material gate of a short channel field effect transistor Electricity 15 Expired
US6069485A C-V method to extract lateral channel doping profiles of MOSFETs Electricity 13 Expired
US6420770B1 STI (Shallow Trench Isolation) structures for minimizing leakage current through drain and source silicides Electricity 13 Expired
US6306710A Fabrication of a gate structures having a longer length toward the top for formation of a rectangular shaped spacer Electricity 12 Expired
US6166558A Method for measuring gate length and drain/source gate overlap Electricity 11 Expired
US6790750B1 Semiconductor-on-insulator body-source contact and method Electricity 9 Expired
US6275972A Method for accurate channel-length extraction in MOSFETs Physics 8 Expired
US6255219A Method for fabricating high-performance submicron MOSFET with lateral asymmetric channel Electricity 8 Expired
US6323099A High k interconnect de-coupling capacitor with damascene process Electricity 8 Expired
US6274420A Sti (shallow trench isolation) structures for minimizing leakage current through drain and source silicides Electricity 8 Expired
US6441434B1 Semiconductor-on-insulator body-source contact and method Electricity 7 Expired
US11403869B2 Optical fingerprint identification apparatus and electronic device Electricity 6 Active
US6373103B1 Semiconductor-on-insulator body-source contact using additional drain-side spacer, and method Electricity 6 Expired
US6525381B1 Semiconductor-on-insulator body-source contact using shallow-doped source, and method Electricity 6 Expired
US6423604B1 Determination of thermal resistance for field effect transistor formed in SOI technology Emerging Cross-Sectional Technologies 4 Expired
US6169302A Determination of parasitic capacitance between the gate and drain/source local interconnect of a field effect transistor Electricity 4 Expired
US10139938B2 Mobile terminal Physics 4 Active
US10784298B2 Optical module, fabrication method thereof, and terminal device using the same Electricity 3 Active

Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.