Liquid delivery MOCVD process for deposition of high frequency dielectric materials
US6277436A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Dec 18, 1998 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Dec 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/033
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A liquid delivery MOCVD method for deposition of dielectric materials such as (Ba,Sr) titanates and (Zr,Sn) titanates, in which metal source compounds are dissolved or suspended in solvent and flash vaporized at temperatures of from about 100.degree. C. to about 300.degree. C. and carried via a carrier gas such as argon, nitrogen, helium, ammonia or the like, into a chemical vapor deposition reactor wherein the precursor vapor is mixed with an oxidizing co-reactant gas such as oxygen, ozone, N.sub.2 O, etc., to deposit the high dielectric metal oxide film on the substrate at a temperature of from about 400.degree. C. to about 1200.degree. C. at a chemical vapor deposition chamber pressure of from about 0.1 torr to about 760 torr. Such process may for example be employed to form a (Ba,Sr) titanate dielectric material wherein at least 60 atomic % of the total metal content of the oxide is titanium. The high dielectric material of the invention may be used to form capacitive microelectronic device structures for applications such as dynamic random access memories and high frequency capacitors.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.