Low-K Dielectric layer and method of making same
US6277765A · kind A · utility
23Cited by
6References
27Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 17, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Aug 17, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A low dielectric constant material, suitable for use as an interlayer dielectric in microelectronic structures includes a porous silicon oxide layer. In a further aspect of the present invention, a porous oxide of silicon is formed by the room temperature oxidation of porous silicon. The room temperature oxidation is achieved by exposing a porous silicon layer to a solution of hydrochloric acid, hydrogen peroxide, and water, in the presence of a metal catalyst.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.