High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations
US6278633A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 5, 1999 |
| Grant date | Aug 21, 2001 |
| Priority date | — |
| Expiry date | Nov 5, 2019 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C29/028
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A multi-level non-volatile memory includes one or more arrays of memory cells including storage cells and dummy cells. The memory observes or measures write operations that write dummy values to the dummy cells and from the observations or measurements selects parameters such as programming voltages or the duration of program cycles. The selection of parameters optimizes write precision within the available access time of a high bandwidth memory. Accessing dummy cells also allows the memory to reach a steady state before writing or reading of data begins. In particular, multiple pipelines sequentially start write operations, and writing of data begins when an equilibrium number of pipelines are performing write operations. Similarly, multiple read operation start before the reading of data for actual use. The stabilization is particularly critical when the pipelines share a power source.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.