Hock C. So
55Patents
36h-index
27Co-inventors
88Inventor score
Filing activity: Jun 6, 1985 → Feb 16, 2011
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US4871930A | Programmable logic device with array blocks connected via programmable interconnect | Electricity | 378 | Expired |
| US4912342A | Programmable logic device with array blocks with programmable clocking | Electricity | 268 | Expired |
| US4899067A | Programmable logic devices with spare circuits for use in replacing defective circuits | Electricity | 251 | Expired |
| US4713792A | Programmable macrocell using eprom or eeprom transistors for architecture control in programmable logic circuits | Electricity | 246 | Expired |
| US6532556B1 | Data management for multi-bit-per-cell memories | Physics | 235 | Expired |
| US5943283A | Address scrambling in a semiconductor memory | Physics | 228 | Expired |
| US5909449A | Multibit-per-cell non-volatile memory with error detection and correction | Physics | 219 | Expired |
| US5969986A | High-bandwidth read and write architectures for non-volatile memories | Physics | 202 | Expired |
| US5748534A | Feedback loop for reading threshold voltage | Physics | 190 | Expired |
| US6278633A | High bandwidth flash memory that selects programming parameters according to measurements of previous programming operations | Physics | 183 | Expired |
| US5638320A | High resolution analog storage EPROM and flash EPROM | Physics | 177 | Expired |
| US5241224A | High-density erasable programmable logic device architecture using multiplexer interconnections | Electricity | 166 | Expired |
| US5694356A | High resolution analog storage EPROM and flash EPROM | Physics | 165 | Expired |
| US6151246A | Multi-bit-per-cell flash EEPROM memory with refresh | Physics | 161 | Expired |
| US5748533A | Read circuit which uses a coarse-to-fine search when reading the threshold voltage of a memory cell | Physics | 138 | Expired |
| US6307776A | Multi-bit-per-cell flash EEPROM memory with refresh | Physics | 116 | Expired |
| US6370075B1 | Charge pump circuit adjustable in response to an external voltage source | Physics | 98 | Expired |
| US7397697B2 | Multi-bit-per-cell flash EEPROM memory with refresh | Physics | 96 | Active |
| US5745409A | Non-volatile memory with analog and digital interface and storage | Physics | 92 | Expired |
| US6345000B1 | Flash memory permitting simultaneous read/write and erase operations in a single memory array | Physics | 91 | Expired |
| US5818757A | Analog and multi-level memory with reduced program disturb | Physics | 88 | Expired |
| US6184726A | Adjustable level shifter circuits for analog or multilevel memories | Physics | 86 | Expired |
| US5682352A | Digital testing of analog memory devices | Physics | 86 | Expired |
| US7170781B2 | Multi-bit-per-cell flash EEPROM memory with refresh | Physics | 80 | Expired |
| US6760262B2 | Charge pump circuit adjustable in response to an external voltage source | Physics | 79 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.