Method of forming dielectric material suitable for microelectronic circuits
US6280794A · kind A · utility
14Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 1, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Nov 1, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/96
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved dielectric material having pores formed therein and a method for forming the material are disclosed. The material is formed of a polymer. Pores within the polymer are formed by forming solid organic particles within the polymer and eventually vaporizing the particles to form pores within the polymer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.