Substrate removal as a function of SIMS analysis
US6281025A · kind A · utility
18Cited by
2References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 30, 1999 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Sep 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/15311
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Substrate removal for post-manufacturing analysis of a semiconductor device is enhanced via a method and system that utilizes ion beam etching, to etch the backside of a semiconductor chip, and utilizes SIMS as a detection technique to not only control removal of the substrate from the backside of the chip but also to determine the endpoint of the removal process. In an example embodiment there is described a method for removing substrate from the backside of a semiconductor chip as a function of detected concentration levels of a selected substrate material that is sputtered off of a region of the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.