MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and production process

US6281079A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Lars Heineck · Dresden, DE
• Giorgio Schweeger · Draveil, FR

Key dates

• Filing date: Mar 19, 1999
• Grant date: Aug 28, 2001
• Expiry date: Mar 19, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D64/516

Abstract

A MOS transistor in a single-transistor memory cell having a locally thickened gate oxide, and a process for producing the transistor. The MOS transistor can be used as a selection transistor in a single-transistor memory cell having nitride spacers, or another spacer material acting as an oxidation barrier. The transistor also has a bird's beak in the gate oxide to reduce leakage currents. The production process enables the bird's beak to be produced before the nitride spacers are produced. The MOS transistor can be used in a DRAM, particularly as a selection transistor.