Damascene metal interconnects using highly directional deposition of barrier and/or seed layers including (III) filling metal
US6281121A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Mar 6, 1998 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Mar 6, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76843
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An improved damascene metal interconnect for use in a semiconductor integrated circuit. By using highly directional deposition of barrier and/or seed layers the texture of the damascene structure is improved. A first barrier metal layer is deposited in a standard deposition manner, and a second barrier metal is then applied in a highly directional manner. For example, tungsten, titanium and tantalum nitrides can be used as barrier metals. Copper or aluminum based metal is deposited over the second barrier metal, and is then polished by using a chemical mechanical polish. A passivation layer can then be deposited over the interconnect.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.