Method for developing ultra-thin resist films
US6281130A · kind A · utility
3Cited by
11References
1Claims
0Family size
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Key dates
| Filing date | Jun 16, 2000 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Jun 16, 2020 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/97
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
There is provided a method of applying a developing liquid onto a semiconductor wafer substrate having a UTR film thereon so as to minimize unexposed film thickness loss during development. This is achieved by applying the developing liquid from a developer nozzle which is off-set from the central position of the wafer substrate. The developing liquid is allowed to contact the wafer substrate for less than 10 seconds. As a result, there is overcome the problems of unexposed film thickness loss and critical dimension variations due to the developer nozzle effects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.