Silicon carbide horizontal channel buffered gate semiconductor devices
US6281521A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jul 9, 1998 |
| Grant date | Aug 28, 2001 |
| Priority date | — |
| Expiry date | Jul 9, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/831
Abstract
Silicon carbide channel semiconductor devices are provided which eliminate the insulator of the gate by utilizing a semiconductor gate layer and buried base regions to create a "pinched off" gate region when no bias is applied to the gate. In particular embodiments of the present invention, the semiconductor devices include a silicon carbide drift layer of a first conductivity type, the silicon carbide drift layer having a first face and having a channel region therein. A buried base region of a second conductivity type semiconductor material is provided in the silicon carbide drift layer so as to define the channel region. A gate layer of a second conductivity type semiconductor material is formed on the first face of the silicon carbide drift layer adjacent the channel region of the silicon carbide drift layer. A gate contact may also be formed on the gate layer. Both transistors and thyristors may be provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.