Patent · US Expired

"Method of producing an integrated circuit chip using low ""k"" factor hybrid photoresist and apparatus formed thereby"

US6284439A · kind A · utility

18Cited by
13References
12Claims
0Family size

Assignee

Inventors

Key dates

Filing dateJun 30, 1998
Grant dateSep 4, 2001
Priority date
Expiry dateJun 30, 2018

Classification

  • Technology area (CPC Y)Emerging Cross-Sectional Technologies
  • CPC primaryY10S430/111
  • WIPO fieldOptics
  • WIPO sectorInstruments

Abstract

A photoresist having both positive and negative tone components resulting in a lower "k" factor than the single tone photoresist is disclosed. The hybrid resist may either have the negative tone resist or the positive tone resist as the major portion, while the other tone is a relatively minor portion. For examples, a positive tone resist may include a minor portion of a negative tone cross-linker or a negative tone resist may include positively acting functional groups. The hybrid resist of the present invention allows for wider exposure dosage windows, therefore increasing the yield or performance and line is density.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.