Semiconductor device and method of manufacturing the same
US6284583A · kind A · utility
34Cited by
7References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 26, 1998 |
| Grant date | Sep 4, 2001 |
| Priority date | — |
| Expiry date | Jun 26, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/038
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device comprises a semiconductor substrate and a silicon nitride film formed on the semiconductor substrate. The silicon nitride film is substantially free from an Si--H bond and has an Si--H density per unit area of 1.times.10.sup.15 cm.sup.-2 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.