Method of fabricating semiconductor device
US6287912A · kind A · utility
10Cited by
2References
17Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/981
Abstract
A mask for etching a relatively thin gate insulating film formed in a gate insulating film forming region is formed by patterning a photoresist film, and the mask is used for introducing an impurity for adjusting the threshold voltages of n-channel field-effect transistors and p-channel field-effect transistors having the relatively thin gate insulating film into regions on the semiconductor substrate not covered with the mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.