Method of etching a substrate
US6287978A · kind A · utility
8Cited by
36References
38Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 30, 1999 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Jun 30, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76802
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A process for controlling the etch of a silicon dioxide layer at a high etch rate and high selectivity with respect to silicon nitride, particularly in a multilayer structure, by maintaining various portions of the etch chamber at elevated temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.