Selective nitride etching with silicate ion pre-loading
US6287983A · kind A · utility
5Cited by
7References
2Claims
0Family size
Assignee
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Key dates
| Filing date | Dec 18, 1998 |
| Grant date | Sep 11, 2001 |
| Priority date | — |
| Expiry date | Dec 18, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31111
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride wet etch in which liquid TEOS is flowed directly into the hot phosphoric acid bath before wafer etching begins. This preloads the bath chemistry with silicate ions, and thus helps assure very high selectivity to silicon oxides.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.