Light-emitting devices including polycrystalline gan layers and method of forming devices

US6288417A · kind A · utility

Assignee

• Xerox Corporation · US

Inventors

• Norbert H. Nickel · Zossen, DE
• Christian G. Van de Walle · Sunnyvale, US
• David P. Bour · Cupertino, US
• Ping Mei · Palo Alto, US

Key dates

• Filing date: Jan 7, 1999
• Grant date: Sep 11, 2001
• Expiry date: Jan 7, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/825

Abstract

Polycrystalline group III-nitride semiconductor materials such as GaN and alloys of GaN and other group III-nitrides are deposited as layers on polycrystalline and non-crystalline substrates. The polycrystalline GaN layers can be formed by solid-phase crystallizing amorphous material or by directly depositing polycrystalline material on the substrates. The polycrystalline GaN material can be incorporated in light-emitting devices such as light-emitting diodes (LEDs). LED arrays can be formed on large-area substrates to provide large-area, full-color active-matrix displays.