Method for electrolytically depositing copper on a semiconductor workpiece
US6290833A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Aug 31, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Aug 31, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH05K3/423
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
This invention employs a novel approach to the copper metallization of a workpiece, such as a semiconductor workpiece. In accordance with the invention, an alkaline electrolytic copper bath is used to electroplate copper onto a seed layer, electroplate copper directly onto a barrier layer material, or enhance an ultra-thin copper seed layer which has been deposited on the barrier layer using a deposition process such as PVD. The resulting copper layer provides an excellent conformal copper coating that fills trenches, vias, and other microstructures in the workpiece. When used for seed layer enhancement, the resulting copper seed layer provide an excellent conformal copper coating that allows the microstructures to be filled with a copper layer having good uniformity using electrochemical deposition techniques. Further, copper layers that are electroplated in the disclosed manner exhibit low sheet resistance and are readily annealed at low temperatures.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.