Sidewall formation for sidewall patterning of sub 100 nm structures
US6291137A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Jan 20, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Jan 20, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/32137
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
In one embodiment, the present invention relates to a method of forming a conductive structure having a width of about 100 nm or less, involving the steps of providing a substrate having a conductive film; patterning a sidewall template over a first portion of the conductive film wherein a second portion of the conductive film is exposed, the sidewall template having at least one sidewall over the conductive film; depositing a sidewall film over the conductive film and the sidewall template, the sidewall film having a vertical portion adjacent the sidewall of the sidewall template and a horizontal portion in areas not adjacent the sidewall of the sidewall template; removing the horizontal portion of the sidewall film exposing a third portion of the conductive film; removing the sidewall template exposing a fourth portion of the conductive film; and etching the third portion and the fourth portion of the conductive film thereby providing the conductive structure having a width of about 100 nm or less underlying the vertical portion of the sidewall film.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.