Christopher F. Lyons
147Patents
29h-index
99Co-inventors
93Inventor score
Filing activity: Oct 6, 1981 → Mar 5, 2013
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6773998B1 | Modified film stack and patterning strategy for stress compensation and prevention of pattern distortion in amorphous carbon gate patterning | Electricity | 157 | Expired |
| US6291137A | Sidewall formation for sidewall patterning of sub 100 nm structures | Electricity | 103 | Expired |
| US6383952B1 | RELACS process to double the frequency or pitch of small feature formation | Electricity | 76 | Expired |
| US6184128A | Method using a thin resist mask for dual damascene stop layer etch | Electricity | 74 | Expired |
| US6020269A | Ultra-thin resist and nitride/oxide hard mask for metal etch | Electricity | 65 | Expired |
| US6037671A | Stepper alignment mark structure for maintaining alignment integrity | Emerging Cross-Sectional Technologies | 61 | Expired |
| US6541360B1 | Bi-layer trim etch process to form integrated circuit gate structures | Emerging Cross-Sectional Technologies | 55 | Expired |
| US5930645A | Shallow trench isolation formation with reduced polish stop thickness | Electricity | 54 | Expired |
| US6534418B1 | Use of silicon containing imaging layer to define sub-resolution gate structures | Electricity | 51 | Expired |
| US6656763B1 | Spin on polymers for organic memory devices | Emerging Cross-Sectional Technologies | 50 | Expired |
| US5482817A | Mid and deep-uv antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 47 | Expired |
| US5401614A | Mid and deep-UV antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 46 | Expired |
| US6440640B1 | Thin resist with transition metal hard mask for via etch application | Electricity | 43 | Expired |
| US5554485A | Mid and deep-UV antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 43 | Expired |
| US5744537A | Antireflective coating films | Emerging Cross-Sectional Technologies | 43 | Expired |
| US6623893B1 | Pellicle for use in EUV lithography and a method of making such a pellicle | Physics | 43 | Expired |
| US6764949B2 | Method for reducing pattern deformation and photoresist poisoning in semiconductor device fabrication | Electricity | 42 | Expired |
| US6165695A | Thin resist with amorphous silicon hard mask for via etch application | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6773954B1 | Methods of forming passive layers in organic memory cells | Electricity | 41 | Expired |
| US6057080A | Top antireflective coating film | Emerging Cross-Sectional Technologies | 41 | Expired |
| US6309926A | Thin resist with nitride hard mask for gate etch application | Electricity | 39 | Expired |
| US6787458B1 | Polymer memory device formed in via opening | Electricity | 38 | Expired |
| US6171962A | Shallow trench isolation formation without planarization mask | Electricity | 38 | Expired |
| US5380621A | Mid and deep-UV antireflection coatings and methods for use thereof | Emerging Cross-Sectional Technologies | 37 | Expired |
| US6825060B1 | Photosensitive polymeric memory elements | Emerging Cross-Sectional Technologies | 35 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.