Method and apparatus for high-resolution in-situ plasma etching of inorganic and metal films

US6291361A · kind A · utility

Assignee

• Conexant Systems, LLC · US

Inventors

• Shao-Wen Hsia · Mission Viejo, US
• Michael Berg · Waiblingen, DE
• Maureen R. Brongo · Laguna Hills, US

Key dates

• Filing date: Mar 24, 1999
• Grant date: Sep 18, 2001
• Expiry date: Mar 24, 2019

Classification

• Technology area (CPC H): Electricity
• CPC primary: H01L21/67069
• WIPO field: Semiconductors
• WIPO sector: Electrical engineering

Abstract

Method and apparatus for plasma etching both metal and inorganic dielectric layers in a single chamber during deep sub-micron semiconductor fabrication. Fluorine based chemistries, or a mixture of fluorine and chlorine based chemistries, are used to etch the inorganic dielectric layer. A switch is then made to chlorine based chemistries, within the same etching chamber, which are utilized to etch the metal layer. Overetching may also be performed with chlorine based chemistries to clear any residuals.