Surface treatment of DARC films to reduce defects in subsequent cap layers
US6291363A · kind A · utility
30Cited by
40References
21Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 1, 1999 |
| Grant date | Sep 18, 2001 |
| Priority date | — |
| Expiry date | Mar 1, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/0234
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention comprises a method for preventing particle formation in a substrate overlying a DARC coating. The method comprising providing a semiconductor construct. A DARC coating is deposited on the construct with a plasma that comprises a silcon-based compound and N.sub.2 O. The DARC coating is exposed to an atmosphere that effectively prevents a formation of defects in the substrate layer. The exposed DARC coating is overlayed with the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.