Anti-reflective coatings and methods for forming and using same
US6294459A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 3, 1998 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Sep 3, 2018 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02274
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An anti-reflective coating material layer is provided that has a relatively high etch rate such that it can be removed simultaneously with the cleaning of a defined opening in a relatively short period of time without affecting the critical dimensions of the opening. A method of forming such a layer includes providing a substrate assembly surface and using a gas mixture of at least a silicon containing precursor, a nitrogen containing precursor, and an oxygen containing precursor. The layer is formed at a temperature in the range of about 50.degree. C. to about 600.degree. C. Generally, the anti-reflective coating material layer deposited is Si.sub.x O.sub.y N.sub.z :H, where x is in the range of about 0.39 to about 0.65, y is in the range of about 0.02 to about 0.56, z is in the range of about 0.05 to about 0.33, and where the atomic percentage of hydrogen in the inorganic anti-reflective coating material layer is in the range of about 10 atomic percent to about 40 atomic percent. The total SiH.sub.4 flow is generally in the range of about 80 sccm to about 400 sccm. The gas mixture may include SiH.sub.4 and N.sub.2 O, where the ratio of SiH.sub.4 :N.sub.2 O is in the range of abou…
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.