Dual slurry particle sizes for reducing microscratching of wafers
US6294472A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 23, 2000 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | May 23, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30625
- WIPO fieldMachine tools
- WIPO sectorMechanical engineering
Abstract
A method includes providing at least one wafer having a process layer formed thereon for polishing. The process layer is polished using a first polishing process that is associated with a slurry having a first abrasive particle size. The process layer is polished using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. A system includes a polishing tool and a process controller. The polishing tool is adapted to receive at least one wafer having a process layer formed thereon for polishing. The polishing tool is adapted to polish the process layer using a first polishing process that is associated with a slurry having a first abrasive particle size. The polishing tool is adapted to polish the process layer using a second polishing process that is associated with a slurry having a second abrasive particle size that is different from the first abrasive particle size. The process controller is coupled to the polishing tool and adapted to communicate with at least one of a slurry controller and the polishing tool.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.