Method for forming an L-shaped spacer with a disposable organic top coating
US6294480A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Nov 19, 1999 |
| Grant date | Sep 25, 2001 |
| Priority date | — |
| Expiry date | Nov 19, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0227
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for forming an L-shaped spacer using a sacrificial organic top coating. A semiconductor structure is provided having a gate structure thereon. A liner oxide layer is formed on the gate structure. A dielectric spacer layer is formed on the liner oxide layer. In the preferred embodiment, the dielectric spacer layer comprises a silicon nitride layer or a silicon oxynitride layer. A sacrificial organic layer is formed on the dielectric spacer layer. The sacrificial organic layer and the dielectric spacer layer are anisotropically etched to form spacers comprising a triangle-shaped sacrificial organic structure and an L-shaped dielectric spacer. The triangle-shaped sacrificial organic structure is removed leaving an L-shaped dielectric spacer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.