Compensation of within-subfield linewidth variation in e-beam projection lithography
US6296976A · kind A · utility
4Cited by
2References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 16, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Jun 16, 2019 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S430/143
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
A method for improving image fidelity on a resist. The method adjusts the intensity distribution of the electron beam such that the feature size at the edges and the center of a subfield have a same width "w". This is accomplished by intentionally increasing the incident intensity where the images are small (more pronounced blurring), and intentionally decreasing the incident intensity where the images are large (less pronounced blurring). This can be achieved, for example, by maintaining a cathode temperature profile which increases or decreases radially by an appropriate amount.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.