Method for fabricating contact pad for semiconductor device
US6297091A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | Sep 16, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Sep 16, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B12/09
Abstract
A method for fabricating a contact pad for a semiconductor device, including the steps of forming device isolation layers in a semiconductor substrate to define active regions, forming a plurality of wordlines crossing the active regions, forming an insulating layer on an entire surface, and selectively removing the insulating layer on storage node contact regions, a bitline contact region, and the device isolation layer in contact with the bitline contact region, so as to form an epitaxial growth blocking layer, and conducting an epitaxial growth using the epitaxial growth blocking layer as a mask, to form a storage node contact pad as well as a bitline contact pad by causing an epitaxial layer grown in the bitline contact region to extend laterally toward the device isolation layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.