Patent · US Expired

Method of making an electrically programmable memory cell

US6297093A · kind A · utility

8Cited by
7References
10Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 25, 1999
Grant dateOct 2, 2001
Priority date
Expiry dateMar 25, 2019

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH10D30/6893

Abstract

The present invention relates to a method of manufacturing an electrically programmable memory cell with a lateral floating gate with respect to the control gate, including the steps of forming an insulated control gate on an active area; forming a thin insulating layer around the control gate; successively depositing a thin layer of a conductive material and a layer of an insulating material; anisotropically etching the insulating material to form spacers of this material; and removing the portions of the thin conductive layer which are not coated with the spacers.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.