Constantin Papadas
11Patents
6h-index
9Co-inventors
51Inventor score
Filing activity: Mar 28, 1995 → Aug 10, 2001
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6218700A | Remanent memory device | Electricity | 100 | Expired |
| US6051884A | Method of forming interconnections in an integrated circuit | Emerging Cross-Sectional Technologies | 25 | Expired |
| US5687113A | Electrically programmable memory cell | Physics | 14 | Expired |
| US6144257A | Bus control buffer amplifier | Electricity | 9 | Expired |
| US6297093A | Method of making an electrically programmable memory cell | Electricity | 8 | Expired |
| US6465332B1 | Method of making MOS transistor with high doping gradient under the gate | Electricity | 6 | Expired |
| US5903494A | Electrically programmable memory cell | Physics | 5 | Expired |
| US6018475A | MOS memory point | Physics | 5 | Expired |
| US6521942B2 | Electrically programmable memory cell | Electricity | 1 | Expired |
| US5740103A | Electrically programmable memory cell | Physics | 1 | Expired |
| US5851919A | Method for forming interconnections in an integrated circuit | Emerging Cross-Sectional Technologies | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.