Transistors with low overlap capacitance
US6297106A · kind A · utility
Assignee
Inventors
Key dates
| Filing date | May 7, 1999 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | May 7, 2019 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28211
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
This invention relates to the fabrication of intergrated circuit devices and more particularly to a method for reducing the gate to drain and gate to source overlap capacitance of deep sub-micron CMOS devices, as an improved means of reducing device switching times. This is accomplished by customizing the gate insulating layer, such that the dielectric constant, K, is lower in the gate to drain and gate to source overlap regions, relative to the more centrally located gate region between the source and drain. This invention avoids the process control problems associated with using conventional post polysilicon gate oxidation as a means of lowering such overlap capacitance, particularly for the deep sub-micron regime.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.