CVD process for DCS-based tungsten silicide
US6297152A · kind A · utility
56Cited by
12References
37Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Dec 12, 1996 |
| Grant date | Oct 2, 2001 |
| Priority date | — |
| Expiry date | Dec 12, 2016 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/28061
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multiple step chemical vapor deposition process for depositing a tungsten silicide layer on a substrate. A first step of the deposition process includes a pretreatment step in which WF.sub.6 is introduced into a deposition chamber. Next, the introduction of WF.sub.6 is stopped and a silicon-containing gas, e.g., SiH.sub.4, is introduced into the chamber. Finally, during a third step, the SiH.sub.4 flow is stopped and DCS and WF.sub.6 are introduced into the chamber to deposit a tungsten silicide layer on the substrate.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.