Etching equipment including a post processing apparatus for removing a resist film, polymer, and impurity layer from an object
US6299722A · kind A · utility
Assignee
Inventor
Key dates
| Filing date | Jun 7, 1995 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Jun 7, 2015 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10S438/907
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main etching so as to remove remaining part of the resist film, a polymer adhered to the surface of the object, and an impurity layer created during the primary etching. In the post-processing step, O.sub.2 gas is made into plasma, by which the remaining part of the resist layer, and the polymer adhered to the surface of the object are removed, and after such a process is substantially finished, a mixture gas including a halogen-containing gas such as CF.sub.4 and O.sub.2 gas is made into plasma, by which the impurity layer is removed.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.