Method for patterning a buried oxide thickness for a separation by implanted oxygen (simox) process
US6300218A · kind A · utility
38Cited by
3References
36Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 8, 2000 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | May 8, 2020 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76243
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of forming a patterned buried oxide film, includes performing an implantation into a substrate, forming a mask on at least portions of the substrate for controlling the implantation diffusion, and annealing the substrate to form a buried oxide. The mask may be selectively patterned. A region that is covered by the mask has a thinner buried oxide than an area which is exposed directly to the annealing ambient.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.