Memory cell configuration and method for its production

US6300652A · kind A · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Lothar Risch · Neubiberg, DE
• Franz Hofmann · Munich, DE
• Rainer Bruchhaus · Yokohama, JP
• Wolfram Wersing · Tauberbischofsheim, DE

Key dates

• Filing date: Nov 22, 1996
• Grant date: Oct 9, 2001
• Expiry date: Nov 22, 2016

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D1/692

Abstract

A memory cell configuration and a method for its production include stacked capacitors and use a vertical storage capacitor having a ferroelectric or paraelectric storage dielectric. In order to produce the storage capacitor, a dielectric layer for the storage dielectric is produced over the whole area. The dielectric layer is subsequently structured and first electrodes and second electrodes for the storage capacitors are formed. The invention is suitable for Gbit DRAMs and for nonvolatile memories.