Apparatus and method for CVD and thermal processing of semiconductor substrates
US6301434A · kind A · utility
52Cited by
22References
22Claims
0Family size
Assignee
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Key dates
| Filing date | Mar 22, 1999 |
| Grant date | Oct 9, 2001 |
| Priority date | — |
| Expiry date | Mar 22, 2019 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/488
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
A thermal processing system and method for processing a semiconductor substrate. A lamp system radiates through a window to heat the substrate. A dual gas manifold provides purge gas through a top showerhead to prevent deposits on the window and provides gas through a lower showerhead to deposit a material on the substrate. A thin support and a radiative cavity with thin radiation shields is used to support and insulate the substrate. A peripheral heater also heats the edges to enhance uniformity. An opaque quartz liner is used to reduce contaminants and undesired deposits and simplify cleaning.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.